Patent · US Active

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US9343615B2 · kind B2 · utility

1Cited by

2References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joachim Hertkorn · Neukirchen, DE
Karl Engl · Niedergebraching, DE
Berthold Hahn · Hemau, DE
Andreas Weimar · Regensburg, DE

Key dates

Filing date	Aug 23, 2012
Grant date	May 17, 2016
Priority date	—
Expiry date	Oct 9, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.