Light emitting device and method of manufacturing the same
US9343624B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Nov 24, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Nov 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.