Electro-optic PN junction modulator formed with a self-aligned process
US9343638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Feb 17, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/218
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic device, comprising a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical signals propagating through the device. The layer of light-carrying material comprises a first doped region of a first type extending into the rib, and a second doped region of a second, different type extending into the rib such that a pn junction is formed within the rib. The pn junction extends substantially parallel to at least two contiguous faces of the rib, resulting in a more efficient device. In addition, a self-aligned fabrication process can be used in order to simplify the fabrication process and increase reliability and yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.