Ultrathin platinum films
US9343749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In at least one embodiment, a method of forming a platinum thin film is provided, including performing a first atomic layer deposition (ALD) process on a substrate using a first platinum organometallic precursor in a first step and an oxidizing precursor in a second step to form an at least partially coated substrate. A second ALD process is then performed on the at least partially coated substrate using a second platinum organometallic precursor in a first step and a reducing precursor in a second step to form a thin film of platinum on the substrate. The first ALD process may be performed for 5 to 150 cycles to nucleate platinum on the substrate surface and the second ALD process may be performed thereafter to grow the thin film and remove surface oxides. A conformal platinum thin film having a thickness of 1 to 10 monolayers may be deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.