Method for growing epitaxial diamond
US9347149B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Jul 12, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.