Patent · US Active

Pixel structure and manufacturing method thereof

US9348185B2 · kind B2 · utility

0Cited by
7References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 2012
Grant dateMay 24, 2016
Priority date—
Expiry dateMay 2, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/167
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.