Lifetime extension of non-volatile semiconductor memory for data storage device
US9348520B2 · kind B2 · utility
1Cited by
86References
24Claims
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Key dates
| Filing date | Apr 30, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Jul 25, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Lifetime extension of a non-volatile semiconductor memory (NVSM) for a data storage device (DSD) includes determining a write amplification factor based on an amount of data previously written to the NVSM and at least one of an amount of data previously requested to be written to the DSD, and an amount of data previously requested to be written to the NVSM. At least a portion of the amount of data to be written to the NVSM is directed or redirected to the disk based on the determined write amplification factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.