Semiconductor device and method of manufacturing the same
US9349463B2 · kind B2 · utility
0Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Apr 6, 2015 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Apr 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To enhance the write speed of a nonvolatile memory. A charge injection/emission part of a nonvolatile memory cell includes an active region having an upper face, a side wall, and a shoulder part connecting the upper face and the side wall, a conductor film covering the upper face and the shoulder part of the active region, and a capacitance insulating film provided between the conductor film and the active region. Furthermore, the active region has a protrusion part constituted of a first concave part with respect to the upper face and a second concave part with respect to the side wall, in the shoulder part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.