Nonvolatile memory device, storage device having the same, and operation and read methods thereof
US9349471B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2015 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Mar 27, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3431
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is for operating a nonvolatile memory device, the nonvolatile memory device including at least one string connected to a bit line, the at least one string including a plurality of memory cells connected in series, each of the plurality of memory cells being connected to a respective word line among a plurality of word lines and stacked in a direction perpendicular to a substrate. The method includes applying a word line voltage needed for an operation to a first word line among the word lines, applying a recovery voltage higher than a ground voltage to the first word line after the operation, and then floating the first word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.