Semiconductor device and method for fabricating the same
US9349651B2 · kind B2 · utility
10Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2015 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate including a circuit region and a scribe lane region, an active fin protruding from the substrate in the circuit region, a first gate structure extending over the active fin in the circuit region, and a second gate structure formed in the scribe lane region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.