Semiconductor structure with template for transition metal dichalcogenides channel material growth
US9349806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Jul 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor structure comprising a single crystal substrate, a channel layer formed above the substrate from a transition metal dichalcogenides (TMDC) material, and a single crystal epitaxial buffer layer formed between the substrate and the channel layer, wherein the buffer layer is formed from material having a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material. Also, disclosed is a method of forming a semiconductor structure comprising selecting a substrate formed from a single crystal material, preparing the substrate for template growth, growing a template on the substrate wherein the template is formed from single crystal material, and growing channel material on the template wherein the channel material is formed from a TMDC material and wherein the buffer layer material has a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.