Integrated circuit device with well controlled surface proximity and method of manufacturing same
US9349831B2 · kind B2 · utility
0Cited by
17References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.