Semiconductor device and electronic device including the semiconductor device
US9349849B2 · kind B2 · utility
12Cited by
28References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | May 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen bather film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.