Nonvolatile semiconductor memory
US9349876B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2013 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.