Magnetic tunnel junction device
US9349944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetic tunnel junction device includes: a first magnetic layer that has an easy axis vertical to a surface; a non-magnetic layer on the first magnetic layer; and a second magnetic layer that has an easy axis vertical to a surface on the non-magnetic layer, and an interface layer formed of a Heussler alloy between the non-magnetic layer and at least one of the first and second magnetic layers. The at least one of the first and second magnetic layers is formed of MnGa. A lattice constant of the interface layer parallel to a major surface thereof in a bulk state thereof is between a lattice constant of the non-magnetic layer parallel to a major surface thereof in a bulk state thereof and a lattice constant of the at least one of the first and second magnetic layers parallel to a major surface thereof in a bulk state thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.