Method for generating quantized anomalous hall effect

US9349946B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qi Xue · Nanjing, CN
• Ke He · Beijing, CN
• Xu-Cun Ma · Beijing, CN
• Xi Chen · Sunnyvale, US
• Li Wang
• Ya-Yu Wang · Beijing, CN
• Li Lv · Beijing, CN
• Cui-Zu Chang · Beijing, CN
• Xiao Feng · Beijing, CN

Key dates

• Filing date: Oct 16, 2013
• Grant date: May 24, 2016
• Expiry date: Jul 1, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/101

Abstract

A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.