Phase change memory cell
US9349951B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 29, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory cell includes a first circuit and a second circuit. The first circuit includes a first electrode, a carbon nanotube wire and a second electrode electrically connected in series; wherein the first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit includes a third electrode, a phase change layer, the carbon nanotube wire, and the first electrode or the second electrode electrically connected in series, wherein the second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell, the carbon nanotube wire includes a bending portion, the third electrode is spaced from the bending portion, and the phase change layer covers the bending portion of the carbon nanotube wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.