Solid state heterojunction device
US9349971B2 · kind B2 · utility
2Cited by
0References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a solid-state p-n heterojunction comprising a p-type material in contact with an n-type material wherein said n-type material comprises SnO2 having at least one surface-coating of a surface coating material having a higher band-gap than SnO2 and/or a conduction band edge closer to vacuum level than SnO2, such as MgO. The invention also provides optoelectronic devices such as solar cells or photo sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.