Stress relieved high power RF circuit
US9350062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Aug 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/0061
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an RF device that includes a laminate structure having a ceramic layer having a predetermined thermal conductivity that is a function of a predetermined RF device operating temperature. The ceramic layer forms a first major surface of the laminate structure and a second major ceramic surface is bonded to a layer of thermoplastic material that is, in turn, bonded to a conductive layer. The thermoplastic material has a coefficient of thermal expansion that substantially matches the conductive layer. A first circuit arrangement is disposed on the first major surface of the laminate structure and it includes a first RF circuit structure having a predetermined geometry and predetermined electrical characteristics. The laminate structure is configured to dissipate thermal energy generated by the at least one first RF circuit structure via substantially the entire second major surface of the laminate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.