PUF circuit based on ZTC point of MOSFET

US9350354B2 · kind B2 · utility

Assignee

• Ningbo University · CN

Inventors

• Pengjun Wang · Zhejiang, CN
• Xuelong Zhang · Ningbo City, CN
• Yuejun Zhang · Zhejiang, CN

Key dates

• Filing date: May 11, 2015
• Grant date: May 24, 2016
• Expiry date: May 11, 2035

Classification

• Technology area (CPC G): Physics
• CPC primary: G09C1/00
• WIPO field: Control
• WIPO sector: Instruments

Abstract

A physical unclonable function (PUF) circuit based on a zero temperature coefficient (ZTC) point of a metal oxide semiconductor field effect transistor (MOSFET), the PUF circuit including at least one PUF circuit unit. Each PUF circuit unit includes: a deviation signal generating circuit module, a signal selection circuit, and a comparison output circuit. The deviation signal generating circuit module includes two deviation signal generating circuits. A control voltage input terminal of the deviation signal generating circuit is supplied with a control voltage, and the control voltage enables a first NMOS, a second NMOS, a third NMOS, a fourth NMOS, a fifth NMOS, a sixth NMOS, a seventh NMOS, and an eighth NMOS to work at a ZTC point.