Method of fabricating liquid for oxide thin film
US9353433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.