Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
US9353437B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/406
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.