Weir method for improved single crystal growth in a continuous Czochralski process
US9353457B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Sep 5, 2012 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.