Wideband CMOS RMS power detection system
US9354260B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2012 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G3/3036
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system includes a first circuit and a second circuit. The first circuit includes a first MOS transistor having a gate and a drain. The first circuit is configured to receive a radio frequency (RF) signal at the gate of the first MOS transistor. The drain of the first MOS transistor is configured to output a first current that is proportional to the square of the input voltage of the RF signal while receiving the RF signal. The second circuit includes a second MOS transistor having a source configured to receive a first current from the first circuit. The second MOS transistor is biased in a triode region and has a channel resistance between the source and a drain. The second circuit is configured to output a voltage proportional to the value of the power of the RF signal received by the first circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.