Memory and logic device and methods for performing thereof
US9355698B2 · kind B2 · utility
1Cited by
1References
30Claims
0Family size
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Key dates
| Filing date | Mar 13, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/761
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In accordance with one exemplary embodiment of the present technique, there is disclosed a spins selective device, including a first layer comprising a ferromagnetic material. The spin selective device further includes a second layer coupled to the first layer. The second layer includes at least one molecule having a specified chirality, such that when an electrical current flows between the first layer and the second layer one or more regions of the ferromagnetic material become magnetically polarized along a certain direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.