Semiconductor devices and methods of manufacturing the same
US9355851B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Apr 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.