Plasma etching apparatus component and manufacturing method for the same
US9355855B2 · kind B2 · utility
0Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Nov 29, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 μm or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.