Method for preventing extreme low-K (ELK) dielectric layer from being damaged during plasma process
US9355893B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Jan 20, 2015 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an interconnect structure is provided. The method includes providing a substrate. The method also includes forming a dielectric layer on the substrate, and the dielectric layer includes an extreme low-k (ELK) dielectric layer. The method includes forming a via hole in the dielectric layer and forming a photoresist in the via hole and on the dielectric layer. The method also includes removing the photoresist by a plasma process using a CxHyOz gas and forming a conductive structure in the via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.