Image sensor with buried light shield and vertical gate
US9356061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Aug 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.