Nonvolatile semiconductor memory device and method of manufacturing the same
US9356111B2 · kind B2 · utility
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Key dates
| Filing date | Oct 20, 2014 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.