Stable high mobility MOTFT and fabrication at low temperature
US9356156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm−3 to approximately 5×1019 cm−3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.