Patent · US Active

Flat panel sensor and flat panel detector

US9356160B2 · kind B2 · utility

0Cited by
1References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 31, 2013
Grant dateMay 31, 2016
Priority date
Expiry dateJul 31, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/189

Abstract

A flat panel sensor and a flat panel detector are provided on the basis of a top-gate TFT structure. The flat panel sensor comprises a base substrate, and a top-gate TFT and a storage capacitor that are formed on the base substrate; the storage capacitor includes a first conductive layer, a second conductive layer disposed in opposition to the first conductive layer, a third conductive layer for output of an electric signal, and a ground line; the first conductive layer is directly connected to a drain electrode and an active layer of the top-gate TFT, the second conductive layer is directly connected to the ground line, and the third conductive layer is connected to the first conductive layer through a via hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.