Light-emitting device and method for manufacturing the same
US9356189B2 · kind B2 · utility
1Cited by
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19Claims
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Key dates
| Filing date | Mar 24, 2014 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Apr 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.