GaN-based LED

US9356190B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Jiansen ZHENG · Xiamen, CN
• Suhui Lin · Xiamen, CN
• Kangwei Peng · Xiamen, CN
• Lingyuan Hong · Xiamen, CN
• LINGFENG YIN · Xiamen, CN

Key dates

• Filing date: Nov 10, 2014
• Grant date: May 31, 2016
• Expiry date: Nov 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816

Abstract

A GaN-based LED includes: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution; and a second reflecting layer over the back side the substrate. The band-shaped or annular distribution can increase a probability light extraction of the LED sideways. By controlling the ratio of lights extracted upwards and sideways, the light-emitting distribution evenness can be adjusted and the uneven heat dissipation can be improved.