Patent · US Active

LEDs with efficient electrode structures

US9356194B2 · kind B2 · utility

0Cited by
53References
17Claims
0Family size

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Key dates

Filing dateApr 22, 2015
Grant dateMay 31, 2016
Priority date
Expiry dateApr 22, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.