Method of manufacture of homodispersed silicon carbide-derived carbon composites
US9356282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention concerns a method of manufacture of the homodispersed composite of the synthetic carbon material derived from carbide and silicon where the powder of the carbon material is first dispersed mechanically with the powder of silicon to homodispersed mixture, then the homodispersed mixture of the carbon material and silicon is sintered in an inert environment at a temperature between 1200 to 1500° C. to synthetic homodispersed composite of the silicon carbide and silicon. The homodispersed composite of the silicon carbide and silicon is heated in an inert environment at a temperature between 800 to 1100° C. and then the homodispersed composite of the silicon carbide and silicon is chlorinated at a temperature from 800 to 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.