Semiconductor DBR laser
US9356425B2 · kind B2 · utility
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3References
19Claims
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Key dates
| Filing date | Nov 1, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Nov 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor distributed Bragg reflector laser configured for single longitudinal mode operation, having an optical waveguide comprising an optical gain section, a first reflector being a first distributed Bragg reflector (DBR) section comprising a grating configured to produce a reflection spectrum having one or more first reflective peaks, and a second reflector, wherein the first DBR section is configured to compensate for thermal chirp that is induced inhomogeneously along the length of the DBR section, in use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.