Patent · US Active

Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture

US9359693B2 · kind B2 · utility

8Cited by

7References

5Claims

0Family size

Assignee

Element Six Technologies US Corporation · US

Inventors

Daniel Francis · Oakland, US
Firooz Faili · Los Gatos, US
Kristopher Matthews · San Francisco, US
Frank Yantis Lowe · Berkeley, US
Quentin Diduck · Santa Clara, US
Sergey Zaytsev · Albany, US
Felix Ejeckam · San Francisco, US

Key dates

Filing date	Feb 28, 2013
Grant date	Jun 7, 2016
Priority date	—
Expiry date	Aug 12, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.