Transistor

US9362356B2 · kind B2 · utility

Assignee

• Analog Devices Global Unlimited Company · BM

Inventors

• Breandan Pol Og O hAnnaidh · Abbeyleix, IE
• Seamus P. Whiston · Abbeyleix, IE
• Edward John Coyne · Athenry, IE
• William Allan Lane · Carrigrohane, IE
• Donal McAuliffe · Abbeyleix, IE

Key dates

• Filing date: Nov 12, 2014
• Grant date: Jun 7, 2016
• Expiry date: Nov 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.