Testing of LDMOS device
US9362388B1 · kind B1 · utility
4Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2011 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Apr 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for testing an LDMOS transistor by measuring leakage current between the source and drain in the presence of a bias voltage. The leakage current is indicative of defects in the structure of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.