Polarization induced doped transistor
US9362389B2 · kind B2 · utility
6Cited by
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21Claims
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Key dates
| Filing date | Aug 27, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.