Oxide thin film transistor, display device, and method for manufacturing array substrate
US9362414B2 · kind B2 · utility
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Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC —)General
Abstract
Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.