Photoelectric conversion device and method for producing same

US9362426B2 · kind B2 · utility

Assignee

• PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. · JP

Inventors

• Ryo Goto · Yokohama, JP
• Satoru Shimada · Maebashi, JP
• Masato Shigematsu · Himeji, JP
• Hitoshi Sakata · Higashiosaka, JP
• Daisuke Ide · Gifu, JP

Key dates

• Filing date: Sep 20, 2013
• Grant date: Jun 7, 2016
• Expiry date: Apr 23, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

This photoelectric conversion device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) and an IP layer (26) formed on the back surface of the n-type monocrystalline silicon substrate (21); an n-side electrode (40) containing an n-side underlayer (43), an n-side primary conductive layer (44), and an n-side protective layer (45); and a p-side electrode (50) containing a p-side underlayer (53), a p-side primary conductive layer (54), and a p-side protective layer (55). The n-side primary conductive layer (44) is formed in a manner so as not to cover the lateral surface of the n-side underlayer (43), and is covered at the lateral surface by the n-side protective layer (45). The p-side electrode (50) is formed in such a manner the lateral surface of the p-side underlayer (53) is not covered, and the lateral surface is covered by the p-side protective layer (55).