Patent · US Active

Metallization of solar cells

US9362427B2 · kind B2 · utility

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13Claims
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Key dates

Filing dateDec 20, 2013
Grant dateJun 7, 2016
Priority date
Expiry dateJan 30, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.