Integrated phase change switch

US9362492B2 · kind B2 · utility

Assignee

• QUALCOMM SWITCH CORP. · US

Inventors

• Sinan Goktepeli · San Diego, US
• Michael A. Stuber · Carlsbad, US

Key dates

• Filing date: Aug 25, 2014
• Grant date: Jun 7, 2016
• Expiry date: Aug 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/063

Abstract

Various methods and devices that involve phase change material (PCM) switches are disclosed. An exemplary integrated circuit comprises an active layer with a plurality of field effect transistor (FET) channels for a plurality of FETs. The integrated circuit also comprises an interconnect layer comprising a plurality of conductive interconnects. The plurality of conductive interconnects couple the plurality of field effect transistors. The integrated circuit also comprises an insulator layer covering at least a portion of the interconnect layer. The integrated circuit also comprises a channel of a radio-frequency (RF) PCM switch. The channel of the RF PCM switch is formed on the insulator layer.