Columnar crystal containing light emitting element and method of manufacturing the same
US9362717B2 · kind B2 · utility
5Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Oct 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.