Method of forming a fine pattern
US9365933B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.