Magnetic stack including TiN-X intermediate layer
US9368142B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/7369
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.