Determining read thresholds based upon read error direction statistics
US9368225B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Dec 1, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a method for setting read thresholds to be used for reading multiple bits per cell flash memory cells, the method may include reading, by a read circuit, the flash memory cells using a set of current read thresholds to provide current read results; finding, by an error evaluation circuit, current read errors direction statistics associated with the current read results; determining multiple read threshold changes based upon the current read error direction statistics, without determining a contribution of each current read threshold to the current read error direction statistics; and altering multiple current read thresholds, by the multiple read threshold updates, to provide a set of next read thresholds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.