Method of fabricating zinc oxide nanostructures using liquid masking layer
US9368346B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Dec 29, 2014 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing zinc oxide nanostructures using a liquid masking layer is disclosed. The method includes preparing a substrate having a zinc oxide seed layer formed thereon; loading the substrate in a reactor in which a lower liquid masking layer, a precursor liquid layer for hydrothermal growth, and an upper liquid masking layer are disposed in order; and forming zinc oxide nanostructures in a pattern on the substrate through hydrothermal growth by heating the precursor liquid layer for hydrothermal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.